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文章摘要
丁春华,汪国庆,段光申,姜 宏.H2对Al-Si-GNP共掺杂ZnO透明导电薄膜性能的影响[J].海南大学学报编辑部:自然科学版,2019,37(1):.
H2对Al-Si-GNP共掺杂ZnO透明导电薄膜性能的影响
Influence of H2 on the Properties of Al-Si-GNP co-Doped ZnO Transparent Conductive Films
投稿时间:2018-11-15  修订日期:2019-03-13
DOI:10.15886/j.cnki.hdxbzkb.2019.0001
中文关键词: 射频磁控溅射;共掺杂;ZnO薄膜;光电性能
英文关键词: radio frequency magnetron sputtering; co doped; zinc oxide thin film; photoelectric property
基金项目:国家重点研发计划(2016YFC0700804);国家自然科学基金 (51562008)
作者单位E-mail
丁春华 海南大学,广东工业大学 ding-chh@163.com 
汪国庆 海南大学 1403863149@qq.com 
段光申 河北中玻新材料有限公司  
姜 宏 海南大学  
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中文摘要:
      以玻璃为基底,采用射频磁控溅射法制备了Al2O3、SiO2、氧化石墨烯(GNP)共掺杂氧化锌(GASZO)透明导电薄膜。考察了在Ar(流量不变)中H2流量对薄膜制备的影响。采用X射线衍射仪( XRD )及扫描电子显微镜 ( SEM )等对薄膜形貌、结构进行了表征。结果表明薄膜晶相为纤锌矿结构、呈c轴择优取向;Scherrer公式计算发现增加H2量,可以减小薄膜的平均晶粒尺寸;H2流量对薄膜内应力影响较大。此外,还采用四探针测试仪、紫外—可见分光光度计(UV-Vis)等对薄膜的光电性能进行了表征。当Ar流量为70 sccm、H2占溅射气氛1%时,薄膜具有最低电阻率7.746×10-4 Ω·cm;适量的H2流量可以提高玻璃在近紫外区的透过率;镀膜后样品在可见光区的平均透过率为90%左右。
英文摘要:
      In the report, Al2O3, SiO2 and grapheme oxide (GNP) co doped ZnO (GASZO) transparent conductive films were grown on glass by radio frequency(RF) magnetron sputtering. Under certain argon flow rate, the effects of H2 flow rate on preparation of the films were investigated. X ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the structure and morphology of co doped ZnO thin films. The results indicated that all the deposited films present a crystalline wurtzite structure with a strong preferred orientation along the c axis. With the increase of hydrogen gas content, the average grain size of the film decreased. The internal stress of the film was affected greatly by hydrogen flow rate. Also, four point probes technique and UV visible spectroscopy(UV Vis)were used to characterize the photoelectric property of thin films. The film had the lowest resistivity of 7.746×10-4 Ω·cm with Ar flux of 70 sccm, accounting 1% H2. The transmittance of near ultraviolet region improved with proper H2 flux, and the average transmittance of all the samples in the visible range was about 90%.
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